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PD - 96124B
IRF7416QPbF
HEXFET ? Power MOSFET
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Advanced Process Technology
Ultra Low On-Resistance
P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
S
S
S
G
1
2
3
4
8
7
6
5
A
D
D
D
D
V DSS = -30V
R DS(on) = 0.02 Ω
Top View
Description
These HEXFET ? Power MOSFET's in package utilize
the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features
of these HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide variety of
applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape &
Reel.
Absolute Maximum Ratings
SO-8
Parameter
Max.
Units
I D @ T A = 25°C
Continuous Drain Current, V GS @ -10V
-10
I D @ T A = 70°C
I DM
P D @T A = 25°C
V GS
E AS
dv/dt
T J
T STG
Continuous Drain Current, V GS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
A
W
W/°C
V
mJ
V/ns
°C
Thermal Resistance
Parameter
Max.
Units
R θ JA
www.irf.com
Junction-to-Ambient
50
°C/W
1
06/29/11
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